Several of these injection structures can be implemented in silicon drift detectors without additional steps in the fabrication process. The calibration is a practical method to trace the temperature dependence of the electron mobility. The structure allows on-line calibration of the drift velocity of electrons within the detector. The paper reports the first successful results of a simple MOS structure to inject electrons at a given position in Silicon Drift Detectors.
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In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etcĮlectron injection in semiconductor drift detectors Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. An industrial prototype has been realised. Multiple gap parallel plate chambers of different types as well as different types of X He counters presently utilized in pollution monitoring. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. The reports presents the main results obtained in the fields of radiation detectors and associated electronics. de Physique Corpusculaire, Caen Univ., 14 (France) The technical challenges associated with generating and processing large amounts of data are also discussed.ĭetectors - Electronics Detecteurs - Electroniqueīregeault, J. The unique capabilities of the direct electron detector and the data analysis required to take advantage of these capabilities are presented. The detector has a 15-bit dynamic range, better than 30-μmμm spatial resolution and less than 20 analogue-to-digital converter count RMS pixel noise. The direct electron detector demonstrated MeV single electron sensitivity and is capable of recording megapixel images at 180 Hz. Here we report on the commissioning of a direct electron detector for time-resolved MeV electron microscopy. Direct electron detectors are now expected to have a similarly dramatic impact on time-resolved MeV electron microscopy, particularly by enabling both spatial and temporal jitter correction.
The introduction of direct electron detectors enabled the structural biology revolution of cryogenic electron microscopy. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etcĪ direct electron detector for time-resolved MeV electron microscopyĮnergy Technology Data Exchange (ETDEWEB) In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. Temperature effects on other detectors and electronic circuits were also investigated. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. The results are encouraging and point to this method as a satisfying solution. The complete study of a linear array of 8 CdTe pixels has been performed and certified. CdTe diode strips for obtaining X-ray imaging were studied. In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). International Nuclear Information System (INIS)īregeault, J.
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